Electric field control of the magnetic state of a material could enable new low-power logic devices and nonvolatile memory cells. Magneto-electric coupling has typically been achieved using complex materials such as multiferroic oxides, dilute magnetic semiconductors, or strain-coupled magnetostrictive/piezoelectric composites. Only recently, direct electrical control of magnetic anisotropy and Curie temperature has been demonstrated in transition metal ferromagnets at room temperature. These effects open the door to electrically gated spintronic devices based on materials amenable to integration with conventional semiconductor electronics.
U. Bauer, S. Emori and G. S. D. Beach, “Voltage-gated Modulation of Domain Wall Velocity in an Ultrathin Metallic Ferromagnet,” arXiv:1207.2996 (2012).
U. Bauer, S. Emori, and G. S. D. Beach, “Electric field control of domain wall propagation in Pt/Co/GdOx films,” Appl. Phys. Lett. 100, 192408 (2012). (view pdf)
U. Bauer, M. Przybylski, J. Kirschner, and G. S. D. Beach, “Magnetoelectric Charge Trap Memory,” Nano Lett. 12, 1437 (2012).
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